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IPA65R380C6XKSA1

IPA65R380C6XKSA1

MOSFET N-CH 650V 10.6A TO220-111

DD78S10HE2S/AA

DD78S10HE2S/AA

CONN D-SUB HD RCPT 78POS CRIMP

IPA65R380C6XKSA1

IPA65R380C6XKSA1

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Part No :

IPA65R380C6XKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 10.6A TO220-111
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10350 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IPA65R380C6XKSA1 PDF
Type Description
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:380mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:-
Power Dissipation (Max):31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-111
Package / Case:TO-220-3 Full Pack
IPA65R380C6XKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPA65R380C6XKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPA65R380C6XKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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