CAP NIOB OXI 150UF 20% 6.3V 2312
MOSFET N-CH 30V 4.5A 8SOIC
DIODE GEN PURP 50V 200MA DO35
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 4.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 24mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 520 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 680mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI3440DV-T1-E3Vishay / Siliconix |
MOSFET N-CH 150V 1.2A 6TSOP |
|
STD30NF06LAGSTMicroelectronics |
MOSFET N-CH 60V 28A DPAK |
|
IRFS23N15DTRLPRochester Electronics |
MOSFET N-CH 150V 23A D2PAK |
|
IXTP05N100MWickmann / Littelfuse |
MOSFET N-CH 1000V 700MA TO220AB |
|
FQPF13N50CSDTURochester Electronics |
MOSFET N-CH 500V 13A TO-220F |
|
FQD9N25TM-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
BSC010NE2LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 38A/100A TDSON |
|
STD16NF06T4STMicroelectronics |
MOSFET N-CH 60V 16A DPAK |
|
IPS135N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIJ470DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 58.8A PPAK SO-8 |
|
IRFU4510PBFRochester Electronics |
MOSFET N-CH 100V 56A IPAK |
|
IRFR224PBFVishay / Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
|
2SK1445LSRochester Electronics |
N-CHANNEL SILICON MOSFET |