MOSFET N-CH 1000V 700MA TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000 V |
Current - Continuous Drain (Id) @ 25°C: | 700mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 17Ohm @ 375mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.8 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 260 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 25W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQPF13N50CSDTURochester Electronics |
MOSFET N-CH 500V 13A TO-220F |
|
FQD9N25TM-F080Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 250V 7.4A DPAK |
|
BSC010NE2LSIATMA1IR (Infineon Technologies) |
MOSFET N-CH 25V 38A/100A TDSON |
|
STD16NF06T4STMicroelectronics |
MOSFET N-CH 60V 16A DPAK |
|
IPS135N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIJ470DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 58.8A PPAK SO-8 |
|
IRFU4510PBFRochester Electronics |
MOSFET N-CH 100V 56A IPAK |
|
IRFR224PBFVishay / Siliconix |
MOSFET N-CH 250V 3.8A DPAK |
|
2SK1445LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
|
FQB85N06TMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SQJ464EP-T2_GE3Vishay / Siliconix |
MOSFET N-CH 60V 32A PPAK SO-8 |
|
AO4406AAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 13A 8SOIC |
|
DMP3018SFK-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 10.2A 6UDFN |