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FQP3N50C-F080

FQP3N50C-F080

MOSFET N-CH 500V 1.8A TO220-3

FQP3N50C-F080

FQP3N50C-F080

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Part No :

FQP3N50C-F080

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 500V 1.8A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
65913000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 13 - Feb 17 2025
PDF
FQP3N50C-F080 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:365 pF @ 25 V
FET Feature:-
Power Dissipation (Max):62W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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