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IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1

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IPD90R1K2C3ATMA1

IPD90R1K2C3ATMA1

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Part No :

IPD90R1K2C3ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 900V 5.1A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14154 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 30 - Nov 03 2025
PDF
IPD90R1K2C3ATMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:-
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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