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FDB16AN08A0

FDB16AN08A0

MOSFET N-CH 75V 9A/58A D2PAK

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FDB16AN08A0

FDB16AN08A0

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Part No :

FDB16AN08A0

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 75V 9A/58A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
19786 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
PDF
FDB16AN08A0 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.857 pF @ 25 V
FET Feature:-
Power Dissipation (Max):135W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB16AN08A0 is available at GangBo-ic.com, Please review product page below for detailed information, including FDB16AN08A0 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDB16AN08A0 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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