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BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1

MOSFET N-CH 80V 10A/40A 8TSDSON

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BSZ123N08NS3GATMA1

BSZ123N08NS3GATMA1

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Part No :

BSZ123N08NS3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 10A/40A 8TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
462646 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
BSZ123N08NS3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 40 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 66W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerVDFN
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