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SIHH20N50E-T1-GE3

SIHH20N50E-T1-GE3

Image is for reference, please contact us to get the real picture

Part No :

SIHH20N50E-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 500V 22A PPAK 8 X 8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12813 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
SIHH20N50E-T1-GE3 PDF
Type Description
Series:E
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:147mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2063 pF @ 100 V
FET Feature:-
Power Dissipation (Max):174W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 8 x 8
Package / Case:8-PowerTDFN
SIHH20N50E-T1-GE3 is available at GangBo-ic.com, Please review product page below for detailed information, including SIHH20N50E-T1-GE3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SIHH20N50E-T1-GE3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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