HEATSINK 35X35X35MM L-TAB
MOSFET N-CH 30V 12A 8SOP
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 11.1mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | 6 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 860 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOP |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF820SPBFVishay / Siliconix |
MOSFET N-CH 500V 2.5A D2PAK |
|
RM4435Rectron USA |
MOSFET P-CH 30V 9.1A/11A 8SOP |
|
SI4136DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 46A 8SO |
|
ZXMP6A13FTAZetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 60V 900MA SOT23-3 |
|
FQB33N10LTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 33A D2PAK |
|
IXFP14N60PWickmann / Littelfuse |
MOSFET N-CH 600V 14A TO220AB |
|
FDS4675-F085Rochester Electronics |
MOSFET P-CH 40V 11A 8SOIC |
|
IRLR3410TRRPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 17A DPAK |
|
STD4NK100ZSTMicroelectronics |
MOSFET N-CH 1000V 2.2A DPAK |
|
AUIRFS4010-7PRochester Electronics |
MOSFET N-CH 100V 190A D2PAK |
|
DMN2028UVT-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.2A TSOT-26 |
|
FCB20N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 20A D2PAK |
|
NVMFS5C612NLWFAFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 38A/250A 5DFN |