MOSFET N-CH 600V 13.8A TO220-FP
Type | Description |
---|---|
Series: | CoolMOS™ P6 |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 13.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 280mOhm @ 5.2A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 430µA |
Gate Charge (Qg) (Max) @ Vgs: | 25.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1190 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 32W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MCH3486-TL-HRochester Electronics |
MOSFET N-CH 60V 2A SC70FL/MCPH3 |
|
DMN3024LSS-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 6.4A 8SO |
|
IPW65R045C7FKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 46A TO247-3 |
|
FDMA8051LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 10A 6MICROFET |
|
BSZ0703LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 40A TSDSON |
|
IRF640SPBFVishay / Siliconix |
MOSFET N-CH 200V 18A D2PAK |
|
IPB80N06S4L05ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 80A TO263-3 |
|
DN2535N3-G-P013Roving Networks / Microchip Technology |
MOSFET N-CH 350V 120MA TO92 |
|
RSM002P03T2LROHM Semiconductor |
MOSFET P-CH 30V 200MA VMT3 |
|
IRLR110TRLVishay / Siliconix |
MOSFET N-CH 100V 4.3A DPAK |
|
IPB025N08N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 120A D2PAK |
|
NVTFS5116PLTWGSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 6A 8WDFN |
|
STD10N60M2STMicroelectronics |
MOSFET N-CH 600V 7.5A DPAK |