MOSFET P-CH 500V 10A TO3P
Type | Description |
---|---|
Series: | PolarP™ |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1Ohm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 50 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2840 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM3K35CTC,L3FToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 20V 250MA CST3C |
|
FDMA8884Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
BUK9Y58-75B,115Nexperia |
MOSFET N-CH 75V 20.73A LFPAK56 |
|
APT8014L2LLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 52A 264 MAX |
|
FQB11P06TMSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 11.4A D2PAK |
|
STF16N65M2STMicroelectronics |
MOSFET N-CH 650V 11A TO220FP |
|
SPD07N60C2Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SIRA14BDP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 21A/64A PPAK SO8 |
|
CSD17556Q5BTTexas Instruments |
MOSFET N-CH 30V 100A 8VSON |
|
NVD3055-094T4GRochester Electronics |
12A, 60V, 0.094OHM, N-CHANNEL, |
|
STW21N150K5STMicroelectronics |
MOSFET N-CH 1500V 14A TO247 |
|
IPI147N12N3GAKSA1Rochester Electronics |
MOSFET N-CH 120V 56A TO262-3 |
|
PSMN025-80YLXNexperia |
MOSFET N-CH 80V 37A LFPAK56 |