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SPS02N60C3

SPS02N60C3

Image is for reference, please contact us to get the real picture

Part No :

SPS02N60C3

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 650V 1.8A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10975 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 24 - Oct 28 2025
PDF
SPS02N60C3 PDF
Type Description
Series:CoolMOS™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:12.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak
SPS02N60C3 is available at GangBo-ic.com, Please review product page below for detailed information, including SPS02N60C3 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for SPS02N60C3 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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