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IRFH4210DTRPBF

IRFH4210DTRPBF

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Part No :

IRFH4210DTRPBF

Manufacturer
Rochester Electronics
Description
HEXFET POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12887 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IRFH4210DTRPBF PDF
Type Description
Series:HEXFET®
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:44A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:77 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4.812 pF @ 13 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6)
Package / Case:8-PowerTDFN
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