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STFI12N60M2

STFI12N60M2

MOSFET N-CH 600V 9A I2PAKFP

STFI12N60M2

STFI12N60M2

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Part No :

STFI12N60M2

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 9A I2PAKFP
Catalog
Transistors - FETs, MOSFETs - Single
Availability
352435 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
STFI12N60M2 PDF
Type Description
Series:MDmesh™ M2
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:538 pF @ 100 V
FET Feature:-
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAKFP (TO-281)
Package / Case:TO-262-3 Full Pack, I²Pak
STFI12N60M2 is available at GangBo-ic.com, Please review product page below for detailed information, including STFI12N60M2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for STFI12N60M2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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