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SI1062X-T1-GE3

SI1062X-T1-GE3

MOSFET N-CH 20V SC89-3

SI1062X-T1-GE3

SI1062X-T1-GE3

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Part No :

SI1062X-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 20V SC89-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12680 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SI1062X-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:530mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:420mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.7 nC @ 8 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:43 pF @ 10 V
FET Feature:-
Power Dissipation (Max):220mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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