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IPP084N06L3GXKSA1

IPP084N06L3GXKSA1

MOSFET N-CH 60V 50A TO220-3

IPP084N06L3GXKSA1

IPP084N06L3GXKSA1

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Part No :

IPP084N06L3GXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 50A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14646 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 02 - Nov 06 2024
PDF
IPP084N06L3GXKSA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.2V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4.9 pF @ 30 V
FET Feature:-
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
IPP084N06L3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPP084N06L3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPP084N06L3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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