MOSFET N-CH 250V 3.8A DPAK
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 250 V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.1Ohm @ 2.3A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 260 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 42W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CPH6337-TL-ERochester Electronics |
MOSFET P-CH 12V 3.5A 6CPH |
|
SIRA10DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
FQA28N50FRochester Electronics |
MOSFET N-CH 500V 28.4A TO3P |
|
XP231P0201TR-GTorex Semiconductor Ltd. |
MOSFET P-CH 30V 200MA SOT23 |
|
IRFS350ARochester Electronics |
MOSFET N-CH 400V 11.5A TO3PF |
|
FDMT80080DCSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 36A/254A 8DUAL |
|
UF3C120080K3SUnitedSiC |
SICFET N-CH 1200V 33A TO247-3 |
|
IXTH2N150LWickmann / Littelfuse |
MOSFET N-CH 1500V 2A TO247 |
|
IRF6711STRPBFRochester Electronics |
MOSFET N-CH 25V 19A/84A DIRECTFT |
|
APT8020LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 800V 38A TO264 |
|
IPD90N06S407ATMA2IR (Infineon Technologies) |
MOSFET N-CH 60V 90A TO252-31 |
|
IPSA70R2K0CEAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 4A TO251-3 |
|
IPB107N20NAATMA1IR (Infineon Technologies) |
MOSFET N-CH 200V 88A D2PAK |