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UF3C120080K3S

UF3C120080K3S

SICFET N-CH 1200V 33A TO247-3

MGPWT-00431-P

MGPWT-00431-P

190UH ER9.5 XFMR SMD, GW

UF3C120080K3S

UF3C120080K3S

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Part No :

UF3C120080K3S

Manufacturer
UnitedSiC
Description
SICFET N-CH 1200V 33A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10529 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Cascode SiCJFET)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):12V
Rds On (Max) @ Id, Vgs:100mOhm @ 20A, 12V
Vgs(th) (Max) @ Id:6V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 15 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1500 pF @ 100 V
FET Feature:-
Power Dissipation (Max):254.2W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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