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R6009ENX

R6009ENX

MOSFET N-CH 600V 9A TO220FM

R6009ENX

R6009ENX

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Part No :

R6009ENX

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 600V 9A TO220FM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10400 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
PDF
R6009ENX PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:535mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FM
Package / Case:TO-220-3 Full Pack
R6009ENX is available at GangBo-ic.com, Please review product page below for detailed information, including R6009ENX price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for R6009ENX to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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