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RM8N650TI

RM8N650TI

MOSFET N-CHANNEL 650V 8A TO220F

RM8N650TI

RM8N650TI

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Part No :

RM8N650TI

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 650V 8A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
772077 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 07 - Feb 11 2025
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:8A (Tj)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:450mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:680 pF @ 50 V
FET Feature:-
Power Dissipation (Max):31.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
RM8N650TI is available at GangBo-ic.com, Please review product page below for detailed information, including RM8N650TI price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM8N650TI to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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