MOSFET N-CH 20V 6.6A 6DFN
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 6.6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 25mOhm @ 6.6A, 4.5V |
Vgs(th) (Max) @ Id: | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 7.1 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 460 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 1.7W (Ta), 12.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-DFN2020MD (2x2) |
Package / Case: | 6-UDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI8410DB-T2-E1Vishay / Siliconix |
MOSFET N-CH 20V 4MICRO FOOT |
|
IRFB4115PBFIR (Infineon Technologies) |
MOSFET N-CH 150V 104A TO220AB |
|
BSS670S2LH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 55V 540MA SOT23-3 |
|
IRF9392PBFRochester Electronics |
MOSFET P-CH 30V 9.8A 8SO |
|
SI4058DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 10.3A 8SOIC |
|
IPA80R280P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO220-3F |
|
NTMFS4985NFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 17.5A/65A 5DFN |
|
NTD4805NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 12.7A/95A DPAK |
|
STQ1NK80ZR-APSTMicroelectronics |
MOSFET N-CH 800V 300MA TO92-3 |
|
APT40M70LVRGRoving Networks / Microchip Technology |
MOSFET N-CH 400V 57A TO264 |
|
SI2338DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6A SOT23 |
|
IXTA76N25T-TRLWickmann / Littelfuse |
MOSFET N-CH 250V 76A TO263 |
|
SCH1430-TL-HRochester Electronics |
MOSFET N-CH 20V 2A 6SCH |