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BSS670S2LH6327XTSA1

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BSS670S2LH6327XTSA1

BSS670S2LH6327XTSA1

Image is for reference, please contact us to get the real picture

Part No :

BSS670S2LH6327XTSA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 540MA SOT23-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
153243 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 29 - Oct 03 2024
PDF
BSS670S2LH6327XTSA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:540mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:650mOhm @ 270mA, 10V
Vgs(th) (Max) @ Id:2V @ 2.7µA
Gate Charge (Qg) (Max) @ Vgs:2.26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:75 pF @ 25 V
FET Feature:-
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
BSS670S2LH6327XTSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including BSS670S2LH6327XTSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for BSS670S2LH6327XTSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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