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RDD050N20TL

RDD050N20TL

MOSFET N-CH 200V 5A CPT3

RDD050N20TL

RDD050N20TL

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Part No :

RDD050N20TL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 200V 5A CPT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
RDD050N20TL PDF
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:720mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:292 pF @ 10 V
FET Feature:-
Power Dissipation (Max):20W (Tc)
Operating Temperature:-
Mounting Type:Surface Mount
Supplier Device Package:CPT3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RDD050N20TL is available at GangBo-ic.com, Please review product page below for detailed information, including RDD050N20TL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RDD050N20TL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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