MOSFET P-CH 20V 20A 6WSON
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 23.9mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id: | 1.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.7 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 655 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2.9W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WSON (2x2) |
Package / Case: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AO4466Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 10A 8SOIC |
|
TK12A50E,S5XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 500V 12A TO220SIS |
|
IXFA270N06T3Wickmann / Littelfuse |
MOSFET N-CH 60V 270A TO263AA |
|
STW20NM60FDSTMicroelectronics |
MOSFET N-CH 600V 20A TO247-3 |
|
FQPF20N06LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 15.7A TO220F |
|
BSB056N10NN3GXUMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 9A/83A 2WDSON |
|
TP5335K1-GRoving Networks / Microchip Technology |
MOSFET P-CH 350V 85MA TO236AB |
|
IPI120N04S302AKSA1Rochester Electronics |
OPTLMOS N-CHANNEL POWER MOSFET |
|
STW20NM50FDSTMicroelectronics |
MOSFET N-CH 500V 20A TO247-3 |
|
TP0606N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 60V 320MA TO92-3 |
|
STD8N65M5STMicroelectronics |
MOSFET N-CH 650V 7A DPAK |
|
IXTK22N100LWickmann / Littelfuse |
MOSFET N-CH 1000V 22A TO264 |
|
FDA20N50FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 22A TO3PN |