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IPD60R1K5CEAUMA1

IPD60R1K5CEAUMA1

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Part No :

IPD60R1K5CEAUMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 5A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14300 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
IPD60R1K5CEAUMA1 PDF
Type Description
Series:CoolMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:9.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 100 V
FET Feature:-
Power Dissipation (Max):49W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R1K5CEAUMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD60R1K5CEAUMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD60R1K5CEAUMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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