MOSFET N-CH 600V 42A TO247AD
Type | Description |
---|---|
Series: | HiPerFET™, Polar3™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 185mOhm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 5V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs: | 78 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 5150 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 830W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247AD (IXFH) |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
5HN01SS-TL-HSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 50V 100MA SMD |
|
NTMFS4821NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
|
IRF7832TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 20A 8SO |
|
IPSA70R360P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 12.5A TO251-3 |
|
FQE10N20CTURochester Electronics |
MOSFET N-CH 200V 4A TO126-3 |
|
RCX050N25ROHM Semiconductor |
MOSFET N-CH 250V 5A TO220FM |
|
IRF135SA204IR (Infineon Technologies) |
MOSFET N-CH 135V 160A D2PAK-7 |
|
IRFP048NPBFRochester Electronics |
HEXFET POWER MOSFET |
|
RMP3N90IPRectron USA |
MOSFET N-CHANNEL 900V 3A TO251 |
|
SQM110P06-8M9L_GE3Vishay / Siliconix |
MOSFET P-CH 60V 110A TO263 |
|
IPD80R280P7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 800V 17A TO252 |
|
FQP10N20LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD17381F4Texas Instruments |
MOSFET N-CH 30V 3.1A 3PICOSTAR |