MOSFET P-CH 200V 11A TO220AB
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 500mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 44 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1200 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 125W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SSM6K341NU,LFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 60V 6A 6UDFNB |
|
FDB6676Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTMFS5C404NLTT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 52A/370A 5DFN |
|
NTD78N03R-35GRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NTD4854N-35GRochester Electronics |
MOSFET N-CH 25V 15.7A/128A IPAK |
|
STD25NF10LT4STMicroelectronics |
MOSFET N-CH 100V 25A DPAK |
|
STD9N40M2STMicroelectronics |
MOSFET N-CH 400V 6A DPAK |
|
STU5N52K3STMicroelectronics |
MOSFET N-CH 525V 4.4A IPAK |
|
IPP147N12N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 120V 56A TO220-3 |
|
STB85NF3LLT4STMicroelectronics |
MOSFET N-CH 30V 85A D2PAK |
|
DMNH6042SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 25A TO252-4L |
|
MSC080SMA120SRoving Networks / Microchip Technology |
SICFET N-CH 1200V 35A D3PAK |
|
IPD60R1K5CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 5A TO252 |