MOSFET N-CH 30V 160A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.1mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 2.35V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 59 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4880 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 135W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRLR3717PBFRochester Electronics |
MOSFET N-CH 20V 120A DPAK |
|
CSD22205LTTexas Instruments |
MOSFET P-CH 8V 7.4A 4PICOSTAR |
|
FDMC8026SSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/21A 8MLP |
|
SPD08N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NP109N04PUK-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 110A TO263 |
|
TK20N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 20A TO247 |
|
RM2P60S2Rectron USA |
MOSFET P-CHANNEL 60V 1.9A SOT23 |
|
DMP3007SFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 30V 70A POWERDI3333 |
|
PMPB20XPEAXNexperia |
MOSFET P-CH 20V 7.2A DFN2020MD-6 |
|
SCH2825-TL-ERochester Electronics |
MOSFET N-CH 30V 1.6A 6SCH |
|
IPN70R900P7SATMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A SOT223 |
|
FCH023N65S3-F155Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 75A TO247 |
|
NTLTS3107PR2GRochester Electronics |
MOSFET P-CH 20V 5.9A 8DFN |