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NTLTS3107PR2G

NTLTS3107PR2G

MOSFET P-CH 20V 5.9A 8DFN

NTLTS3107PR2G

NTLTS3107PR2G

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Part No :

NTLTS3107PR2G

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 20V 5.9A 8DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 12 - Nov 16 2024
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:16mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 16 V
FET Feature:-
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFN (3x3), (MICRO8 LEADLESS)
Package / Case:8-VDFN Exposed Pad
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