MOSFET N-CH 40V 12A/50A ULTRASO8
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta), 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 22 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1920 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 2.1W (Ta), 60W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | UltraSO-8™ |
Package / Case: | 3-PowerSMD, Flat Leads |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
2SJ254Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
FDY102PZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 830MA SC89-3 |
|
IXTP100N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 100A TO220AB |
|
AOI21357Alpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 23A/70A TO251A |
|
APT32F120JRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 33A ISOTOP |
|
AON6290Alpha and Omega Semiconductor, Inc. |
MOSFET N CH 100V 28A DFN5X6 |
|
NIF9N05CLT1GRochester Electronics |
MOSFET N-CH 59V 2.6A SOT223 |
|
SISS52DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 47.1A/162A PPAK |
|
SI7192DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
|
IRFU220PBFVishay / Siliconix |
MOSFET N-CH 200V 4.8A TO251AA |
|
IRFI4228PBF-IRRochester Electronics |
HEXFET N-CHANNEL POWER MOSFET |
|
IPI029N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 24A/100A TO262-3 |
|
DMT10H072LFV-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 100V PWRDI3333 |