MOSFET N-CH 100V PWRDI3333
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Ta), 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 62mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id: | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 4.5 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 228 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 (Type UX) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SFW2955TMRochester Electronics |
P-CHANNEL POWER MOSFET |
|
BUK9M6R6-30EXNexperia |
MOSFET N-CH 30V 70A LFPAK33 |
|
APT60M75JVRRoving Networks / Microchip Technology |
MOSFET N-CH 600V 62A ISOTOP |
|
NTMD4184PFR2GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 2.3A 8SOIC |
|
SUD50N03-06AP-E3Vishay / Siliconix |
MOSFET N-CH 30V 90A TO252 |
|
FCB20N60-F085Rochester Electronics |
MOSFET N-CH 600V 20A D2PAK |
|
AUIRL7766M2TRRochester Electronics |
MOSFET N-CH 100V 10A DIRECTFET |
|
IXTN62N50LWickmann / Littelfuse |
MOSFET N-CH 500V 62A SOT227B |
|
NTHS4111PT1Rochester Electronics |
P-CHANNEL MOSFET |
|
IPW65R420CFDFKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 8.7A TO247-3 |
|
BSC016N03MSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 28A/100A TDSON |
|
RM21N700TIRectron USA |
MOSFET N-CHANNEL 700V 21A TO220F |
|
SKI10195Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 47A TO263 |