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TK32E12N1,S1X

TK32E12N1,S1X

MOSFET N CH 120V 60A TO-220

TK32E12N1,S1X

TK32E12N1,S1X

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Part No :

TK32E12N1,S1X

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N CH 120V 60A TO-220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
741274 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
TK32E12N1,S1X PDF
Type Description
Series:U-MOSVIII-H
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 60 V
FET Feature:-
Power Dissipation (Max):98W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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