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NVBG080N120SC1

NVBG080N120SC1

TRANS SJT N-CH 1200V 30A D2PAK-7

NVBG080N120SC1

NVBG080N120SC1

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Part No :

NVBG080N120SC1

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS SJT N-CH 1200V 30A D2PAK-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10800 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:56 nC @ 20 V
Vgs (Max):+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds:1154 pF @ 800 V
FET Feature:-
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
NVBG080N120SC1 is available at GangBo-ic.com, Please review product page below for detailed information, including NVBG080N120SC1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVBG080N120SC1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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