MOSFET P-CH 8V 3.7A 6WDFN
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 8 V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs: | 36mOhm @ 6.2A, 4.5V |
Vgs(th) (Max) @ Id: | 720mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 25 nC @ 4.5 V |
Vgs (Max): | ±6V |
Input Capacitance (Ciss) (Max) @ Vds: | 1.585 pF @ 4 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 6-WDFN (2x2) |
Package / Case: | 6-WDFN Exposed Pad |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRFR3708TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 61A DPAK |
|
DMN90H2D2HCTIZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 900V 6A ITO220AB |
|
IPW50R350CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
NVMFS4C03NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 31.4A/143A 5DFN |
|
IXFH16N80PWickmann / Littelfuse |
MOSFET N-CH 800V 16A TO247AD |
|
FDB52N20TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 200V 52A D2PAK |
|
FSS273-TL-ERochester Electronics |
N-CHANNEL MOSFET |
|
RRF015P03GTLROHM Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3 |
|
FDC658PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 4A SUPERSOT6 |
|
IPB45N04S4L-08Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
SISH108DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 14A PPAK1212-8SH |
|
RM35P100T2Rectron USA |
MOSFET P-CH 100V 35A TO220-3 |
|
PMZ390UNEYLNexperia |
MOSFET N-CH 30V 900MA DFN1006-3 |