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NTLJS1102PTAG

NTLJS1102PTAG

MOSFET P-CH 8V 3.7A 6WDFN

NTLJS1102PTAG

NTLJS1102PTAG

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Part No :

NTLJS1102PTAG

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 8V 3.7A 6WDFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
36000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
PDF
NTLJS1102PTAG PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):8 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:36mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:720mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:1.585 pF @ 4 V
FET Feature:-
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
NTLJS1102PTAG is available at GangBo-ic.com, Please review product page below for detailed information, including NTLJS1102PTAG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTLJS1102PTAG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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