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MOSFET N-CH 30V 29A/100A TDSON

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BSC0501NSIATMA1

BSC0501NSIATMA1

Image is for reference, please contact us to get the real picture

Part No :

BSC0501NSIATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 29A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10788 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 15 - Jun 19 2024
PDF
BSC0501NSIATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 15 V
FET Feature:Schottky Diode (Body)
Power Dissipation (Max):2.5W (Ta), 50W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-6
Package / Case:8-PowerTDFN
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