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FQP4N20L

FQP4N20L

MOSFET N-CH 200V 3.8A TO220-3

T0053637299

T0053637299

FUME ABSORBER ARTICULATING ARM

FQP4N20L

FQP4N20L

Image is for reference, please contact us to get the real picture

Part No :

FQP4N20L

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 200V 3.8A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
8436000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jun 16 - Jun 20 2024
PDF
FQP4N20L PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:5.2 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:310 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
FQP4N20L is available at GangBo-ic.com, Please review product page below for detailed information, including FQP4N20L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQP4N20L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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