MOSFET N-CH 40V 19A/100A 8VSON
Type | Description |
---|---|
Series: | NexFET™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 19A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 4.3mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 32 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2640 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-VSONP (5x6) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
HUF76609D3STSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 10A TO252AA |
|
FQI1P50TURochester Electronics |
MOSFET P-CH 500V 1.5A I2PAK |
|
AUIRFR3607TRLRochester Electronics |
AUTOMOTIVE HEXFET N CHANNEL |
|
UF3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPN3R704PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
|
IXTK550N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 550A TO264 |
|
SI1032X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 200MA SC89-3 |
|
FQP9N15Rochester Electronics |
MOSFET N-CH 150V 9A TO220-3 |
|
IPAN50R500CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 11.1A TO220 |
|
PSMN7R0-100ES,127Rochester Electronics |
MOSFET N-CH 100V 100A I2PAK |
|
IPW50R250CPFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
IPP029N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 24A/100A TO220-3 |