AUTOMOTIVE HEXFET N CHANNEL
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 84 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 3070 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 140W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-Pak |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
UF3C120040K3SUnitedSiC |
SICFET N-CH 1200V 65A TO247-3 |
|
IRFR321Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
TPN3R704PL,L1QToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 80A 8TSON |
|
IXTK550N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 550A TO264 |
|
SI1032X-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 200MA SC89-3 |
|
FQP9N15Rochester Electronics |
MOSFET N-CH 150V 9A TO220-3 |
|
IPAN50R500CEXKSA1IR (Infineon Technologies) |
MOSFET N-CH 500V 11.1A TO220 |
|
PSMN7R0-100ES,127Rochester Electronics |
MOSFET N-CH 100V 100A I2PAK |
|
IPW50R250CPFKSA1Rochester Electronics |
MOSFET N-CH 500V 13A TO247-3 |
|
IPP029N06NAKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 24A/100A TO220-3 |
|
NTMFS4854NST3GRochester Electronics |
MOSFET N-CH 25V 15.2A/149A SO8FL |
|
APT1204R7BFLLGRoving Networks / Microchip Technology |
MOSFET N-CH 1200V 3.5A TO247 |
|
3N163 DIELinear Integrated Systems, Inc. |
P-CHANNEL, SINGLE ENHANCEMENT MO |