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FDN5618P

FDN5618P

MOSFET P-CH 60V 1.25A SUPERSOT3

FDN5618P

FDN5618P

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Part No :

FDN5618P

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET P-CH 60V 1.25A SUPERSOT3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
930793 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
FDN5618P PDF
Type Description
Series:PowerTrench®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13.8 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:430 pF @ 30 V
FET Feature:-
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT-3
Package / Case:TO-236-3, SC-59, SOT-23-3
FDN5618P is available at GangBo-ic.com, Please review product page below for detailed information, including FDN5618P price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDN5618P to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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