CAP CER 22PF 500V C0G/NP0 0603
HEATSINK 30X30X15MM R-TAB T766
HEATSINK 30X30X30MM R-TAB T766
MOSFET N-CH 800V 5A DPAK
Type | Description |
---|---|
Series: | MDmesh™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 800 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.15Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 12 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 85W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DPAK |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
SI2303CDS-T1-BE3Vishay / Siliconix |
MOSFET P-CH 30V 1.9A/2.7A SOT23 |
![]() |
APT106N60LC6Roving Networks / Microchip Technology |
MOSFET N-CH 600V 106A TO264 |
![]() |
IPB50N10S3L16ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 50A TO263-3 |
![]() |
IPI024N06N3GXKSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 120A TO262-3 |
![]() |
IRFR214PBF-BE3Vishay / Siliconix |
MOSFET N-CH 250V 2.2A DPAK |
![]() |
IPP80N03S4L03AKSA1IR (Infineon Technologies) |
MOSFET N-CH 30V 80A TO220-3 |
![]() |
EPC2033EPC |
GANFET N-CH 150V 31A DIE |
![]() |
NTMFS4983NFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 22A/106A 5DFN |
![]() |
IXTH260N055T2Wickmann / Littelfuse |
MOSFET N-CH 55V 260A TO247 |
![]() |
2SK2628LSRochester Electronics |
N-CHANNEL SILICON MOSFET |
![]() |
SQV120N06-4M7L_GE3Vishay / Siliconix |
MOSFET N-CH 60V 120A TO262-3 |
![]() |
IPW65R190C6Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
ECH8320-TL-HRochester Electronics |
MOSFET P-CH 20V 9.5A SOT28FL |