MOSFET N-CH 600V 1.4A TO220FP
Type | Description |
---|---|
Series: | SuperMESH™ |
Package: | Tube |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 1.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 8Ohm @ 700mA, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 10 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 170 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 20W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220FP |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NTMS4801NR2GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7.5A 8SOIC |
![]() |
NTY100N10GRochester Electronics |
MOSFET N-CH 100V 123A TO264 |
![]() |
FCB11N60TMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 11A D2PAK |
![]() |
RD3L08BGNTLROHM Semiconductor |
MOSFET N-CH 60V 80A TO252 |
![]() |
FQP6N90CSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 900V 6A TO220-3 |
![]() |
IPD65R950CFDATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 3.9A TO252-3 |
![]() |
CSD17311Q5Texas Instruments |
MOSFET N-CH 30V 32A/100A 8VSON |
![]() |
BUK9Y09-40B,115Nexperia |
MOSFET N-CH 40V 75A LFPAK56 |
![]() |
NP160N055TUK-E1-AYRenesas Electronics America |
MOSFET N-CH 55V 160A TO263-7 |
![]() |
SMBF1046LT1Rochester Electronics |
NFET SOT23 SPECIAL TR |
![]() |
NVTFS6H880NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 6.3A/21A 8WDFN |
![]() |
SIHP21N60EF-BE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
![]() |
NTD4804NA-1GRochester Electronics |
NTD4804NA-1G |