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RD3L08BGNTL

RD3L08BGNTL

MOSFET N-CH 60V 80A TO252

RD3L08BGNTL

RD3L08BGNTL

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Part No :

RD3L08BGNTL

Manufacturer
ROHM Semiconductor
Description
MOSFET N-CH 60V 80A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12311 pieces
Shipped from
HK warehouse
Expected Shipping Date
Jul 08 - Jul 12 2024
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3620 pF @ 30 V
FET Feature:-
Power Dissipation (Max):119W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
RD3L08BGNTL is available at GangBo-ic.com, Please review product page below for detailed information, including RD3L08BGNTL price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RD3L08BGNTL to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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