MOSFET N-CH 75V 120A D2PAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 75 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 5.8mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 110 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4750 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
NVMFS5C645NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A/100A 5DFN |
![]() |
BUK9515-60E,127Rochester Electronics |
MOSFET N-CH 60V 54A TO220AB |
![]() |
BG5120KE6327Rochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
SIHD6N62E-GE3Vishay / Siliconix |
MOSFET N-CH 620V 6A DPAK |
![]() |
BUZ102SLRochester Electronics |
N-CHANNEL POWER MOSFET |
![]() |
IXFH170N25X3Wickmann / Littelfuse |
MOSFET N-CH 250V 170A TO247 |
![]() |
FQP22N30Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 300V 21A TO220-3 |
![]() |
FDD86110Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12.5A/50A DPAK |
![]() |
NVMFS5C682NLAFT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 8.8A/25A 5DFN |
![]() |
SISS42LDN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 100V 11.3A/39A PPAK |
![]() |
STW57N65M5STMicroelectronics |
MOSFET N-CH 650V 42A TO247 |
![]() |
RM120N40T2Rectron USA |
MOSFET N-CH 40V 120A TO220-3 |
![]() |
MSC130SM120JCU3Roving Networks / Microchip Technology |
TRANS SJT N-CH 1.2KV 173A SOT227 |