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AX7MBF4-910.0000T

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NVMFS5C645NLAFT3G

NVMFS5C645NLAFT3G

MOSFET N-CH 60V 22A/100A 5DFN

IDSD-10-D-02.75

IDSD-10-D-02.75

INSULATION DISPLACEMENT TERMINAL

84VH-CBSA-4.25X4.25X0.8

84VH-CBSA-4.25X4.25X0.8

RF SHIELD 4.25" X 4.25" T/H

NVMFS5C645NLAFT3G

NVMFS5C645NLAFT3G

Image is for reference, please contact us to get the real picture

Part No :

NVMFS5C645NLAFT3G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 22A/100A 5DFN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
020602 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 29 - Nov 02 2025
PDF
NVMFS5C645NLAFT3G PDF
Type Description
Series:Automotive, AEC-Q101
Package:Tape & Reel (TR)
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.7W (Ta), 79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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