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IRFD9110

IRFD9110

0.7A 100V 1.200 OHM P-CHANNEL

IRFD9110

IRFD9110

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Part No :

IRFD9110

Manufacturer
Rochester Electronics
Description
0.7A 100V 1.200 OHM P-CHANNEL
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18018 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IRFD9110 PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 420mA, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:200 pF @ 25 V
FET Feature:-
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:4-DIP, Hexdip, HVMDIP
Package / Case:4-DIP (0.300", 7.62mm)
IRFD9110 is available at GangBo-ic.com, Please review product page below for detailed information, including IRFD9110 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRFD9110 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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