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IPB60R099C7ATMA1

IPB60R099C7ATMA1

MOSFET N-CH 650V 22A TO263-3

IPB60R099C7ATMA1

IPB60R099C7ATMA1

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Part No :

IPB60R099C7ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 650V 22A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10846 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPB60R099C7ATMA1 PDF
Type Description
Series:CoolMOS™ C7
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id:4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1819 pF @ 400 V
FET Feature:-
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3
Package / Case:TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
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