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FDAF59N30

FDAF59N30

MOSFET N-CH 300V 34A TO3PF

FDAF59N30

FDAF59N30

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Part No :

FDAF59N30

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 300V 34A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10178 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
FDAF59N30 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:56mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4.67 pF @ 25 V
FET Feature:-
Power Dissipation (Max):161W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
FDAF59N30 is available at GangBo-ic.com, Please review product page below for detailed information, including FDAF59N30 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDAF59N30 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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