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IPU50R3K0CEAKMA1

IPU50R3K0CEAKMA1

MOSFET N-CH 500V 1.7A TO251-3

IPU50R3K0CEAKMA1

IPU50R3K0CEAKMA1

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Part No :

IPU50R3K0CEAKMA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 500V 1.7A TO251-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
460446 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 25 - Nov 29 2024
PDF
IPU50R3K0CEAKMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:84 pF @ 100 V
FET Feature:-
Power Dissipation (Max):26W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IPU50R3K0CEAKMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPU50R3K0CEAKMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPU50R3K0CEAKMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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