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IAUS165N08S5N029ATMA1

IAUS165N08S5N029ATMA1

MOSFET N-CH 80V 165A HSOG-8

IAUS165N08S5N029ATMA1

IAUS165N08S5N029ATMA1

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Part No :

IAUS165N08S5N029ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 80V 165A HSOG-8
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11001 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 26 - Sep 30 2024
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:165A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6370 pF @ 40 V
FET Feature:-
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-HSOG-8-1
Package / Case:8-PowerSMD, Gull Wing
IAUS165N08S5N029ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IAUS165N08S5N029ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IAUS165N08S5N029ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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