HEATSINK 50X50X10MM XCUT T412
MOSFET N-CH 30V 30A/136A 5DFN
FIBER OPTIC CBL LC-SC DUPLEX 7M
DIODE GEN PURP 1KV 1A A-405
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 30A (Ta), 136A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 2.1mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45.2 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3071 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 3.1W (Ta), 64W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 5-DFN (5x6) (8-SOFL) |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FQD5N60CTMRochester Electronics |
POWER FIELD-EFFECT TRANSISTOR, 2 |
|
FDS8670Rochester Electronics |
MOSFET N-CH 30V 21A 8SOIC |
|
RM20N650HDRectron USA |
MOSFET N-CH 650V 20A TO263-2 |
|
FDZ191PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 3A 6WLCSP |
|
FDMS8622Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 4.8A/16.5A 8QFN |
|
BSS7728NH6327XTSA2IR (Infineon Technologies) |
MOSFET N-CH 60V 200MA SOT23-3 |
|
HUF76407D3STRochester Electronics |
N-CHANNEL LOGIC LEVEL ULTRAFET P |
|
DMN3020UFDF-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 15A 6UDFN |
|
FDPF12N60NZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 12A TO220F |
|
IXTP94N20X4Wickmann / Littelfuse |
MOSFET 200V 94A N-CH ULTRA TO220 |
|
STP17NK40ZSTMicroelectronics |
MOSFET N-CH 400V 15A TO220AB |
|
FDMS0310ASSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 19A/22A 8PQFN |
|
IRFS3207PBFRochester Electronics |
MOSFET N-CH 75V 170A D2PAK |